Datenblatt-Suchmaschine für elektronische Bauteile |
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SI8425DB Datenblatt(PDF) 5 Page - Vishay Siliconix |
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SI8425DB Datenblatt(HTML) 5 Page - Vishay Siliconix |
5 / 11 page Vishay Siliconix Si8425DB Document Number: 63909 S12-2180-Rev. A, 10-Sep-12 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Note: When Mounted on 1" x 1" FR4 with full Copper. * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 4 6 8 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) Power Derating 0.0 0.3 0.6 0.9 1.2 1.5 25 50 75 100 125 150 T A - Ambient Temperature (°C) |
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Ähnliche Beschreibung - SI8425DB |
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