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FDG6321C Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FDG6321C Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page Electrical Characteristics (T A = 25 OC unless otherwise noted ) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 µA N-Ch 25 V V GS = 0 V, ID = -250 µA P-Ch -25 ∆BV DSS/∆TJ Breakdown Voltage Temp. Coefficient I D= 250 µA, Referenced to 25 oC N-Ch 26 mV/ oC I D = -250 µA, Referenced to 25 oC P-Ch -22 I DSS Zero Gate Voltage Drain Current V DS = 20 V, VGS = 0 V N-Ch 1 µA T J = 55°C 10 I GSS Gate - Body Leakage Current V DS = -20 V, VGS = 0 V P-Ch -1 µA T J = 55°C -10 I GSS Gate - Body Leakage Current V GS = 8 V, VDS = 0 V N-Ch 100 nA V GS = -8 V, VDS = 0 V P-Ch -100 nA ON CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage V DS = VGS, ID = 250 µA N-Ch 0.65 0.8 1.5 V V DS = VGS, ID = -250 µA P-Ch -0.65 -0.82 -1.5 ∆V GS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient I D = 250 µA, Referenced to 25 oC N-Ch -2.6 mV/ oC I D = -250 µA, Referenced to 25 oC P-Ch 2.1 R DS(ON) Static Drain-Source On-Resistance V GS = 4.5 V, ID = 0.5 A N-Ch 0.34 0.45 Ω T J =125°C 0.55 0.72 V GS = 2.7 V, ID = 0.2 A 0.44 0.6 V GS = -4.5 V, ID = -0.41 A P-Ch 0.85 1.1 T J =125°C 1.2 1.8 V GS = -2.7 V, ID = -0.25 A 1.15 1.5 I D(ON) On-State Drain Current V GS = 4.5 V, VDS = 5 V N-Ch 0.5 A V GS = -4.5 V, VDS = -5 V P-Ch -0.41 g FS Forward Transconductance V DS = 5 V, ID = 0.5 A N-Ch 1.45 S V DS = -5 V, ID = -0.41 A P-Ch 0.9 DYNAMIC CHARACTERISTICS C iss Input Capacitance N-Channel N-Ch 50 pF V DS = 10 V, VGS = 0 V, P-Ch 62 C oss Output Capacitance f = 1.0 MHz N-Ch 28 P-Channel P-Ch 34 C rss Reverse Transfer Capacitance V DS = -10 V, VGS = 0V, N-Ch 9 f = 1.0 MHz P-Ch 10 FDG6321C Rev. D |
Ähnliche Teilenummer - FDG6321C |
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Ähnliche Beschreibung - FDG6321C |
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