Datenblatt-Suchmaschine für elektronische Bauteile |
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FDN5630 Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
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FDN5630 Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDN5630 Rev. C Typical Characteristics (continued) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) R (t) = r(t) * R R = 270 C/W Duty Cycle, D = t /t 1 2 θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 0 4 8 12 16 20 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA=270 o C/W TA=25 o C 0 2 4 6 8 10 024 68 Qg, GATE CHARGE (nC) ID = 1.7A VDS = 10V 20V 30V 0 100 200 300 400 500 600 0 102030 405060 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V 0.01 0.1 1 10 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 10ms 1ms 100 µs RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 270 oC/W TA = 25 oC |
Ähnliche Teilenummer - FDN5630 |
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Ähnliche Beschreibung - FDN5630 |
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