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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS3912 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FDS3912 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDS3912 Rev C2(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 50 V, ID= 3 A 90 mJ IAR Drain-Source Avalanche Current 3.0 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C 108 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.5 4 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C –6 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 3 A VGS = 6 V, ID = 2.8 A VGS = 10 V, ID = 3 A, TJ = 125 °C 92 98 175 125 135 250 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V 10 A gFS Forward Transconductance VDS = 10V, ID = 3 A 11 S Dynamic Characteristics Ciss Input Capacitance 632 pF Coss Output Capacitance 40 pF Crss Reverse Transfer Capacitance VDS = 50 V, V GS = 0 V, f = 1.0 MHz 20 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 8.5 17 ns tr Turn–On Rise Time 2 4 ns td(off) Turn–Off Delay Time 23 37 ns tf Turn–Off Fall Time VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 4.5 9 ns Qg Total Gate Charge 14 20 nC Qgs Gate–Source Charge 2.4 nC Qgd Gate–Drain Charge VDS = 50 V, ID = 3 A, VGS = 10 V 3.8 nC |
Ähnliche Teilenummer - FDS3912 |
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Ähnliche Beschreibung - FDS3912 |
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