Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS6890A Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
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FDS6890A Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDS6890A Rev. C Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Typical Characteristics (continued) 0. 01 0. 1 0. 5 10 50 100 300 0 5 10 15 20 25 30 SINGLE PULSE TI ME (SEC) SINGLE PUL SE R =13 5 C/W T = 25 C θJA A Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (s ec) 1 S i n g l e P u l s e D =0 .5 0.1 0.0 5 0.0 2 0.0 1 0.2 D u t y C y cl e, D = t /t 1 2 T - T = P * R (t) θJA A J P(p k) t1 t 2 R (t) = r( t) * R R = 135 C/W θJA θJA θJA 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 10ms 1ms 100 µs RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 135 oC/W TA = 25 oC 0 800 1600 2400 3200 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS COSS CRSS f = 1 MHz VGS = 0 V 0 1 2 3 4 5 0 6 12 18 24 30 Qg, GATE CHARGE (nC) ID = 7.5A VDS = 5V 10V 15V |
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