Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS7064A Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FDS7064A Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 4 page FDS7064A Rev A1(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 20 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V , VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.8 1.2 2 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -4 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 19 A VGS = 10 V, ID = 21 A 6.5 5.5 m Ω ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 10 V, ID = 19 A 75 S Dynamic Characteristics Ciss Input Capacitance 5070 pF Coss Output Capacitance 550 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 230 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 17 25 ns tr Turn–On Rise Time 18 25 ns td(off) Turn–Off Delay Time 69 100 ns tf Turn–Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 29 42 ns Qg Total Gate Charge 33 46 nC Qgs Gate–Source Charge 7.5 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 19 A, VGS = 4.5 V 6.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 3.2 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 2) 1.2 V Notes: 1. RθJA is the junction-to-ambient thermal resistance. RθJA depends on the user's board design. a) 38°C/W when mounted on a 1in 2 pad of 2 oz copper |
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