Datenblatt-Suchmaschine für elektronische Bauteile |
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TC4627COE Datenblatt(PDF) 2 Page - Microchip Technology |
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TC4627COE Datenblatt(HTML) 2 Page - Microchip Technology |
2 / 18 page TC4626/TC4627 DS21426C-page 2 2001-2012 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Supply Voltage ......................................................6.2V Input Voltage, Any Terminal ..................................... VS + 0.3V to GND – 0.3V Package Power Dissipation (TA 70°C) PDIP .........................................................730mW CERDIP....................................................800mW SOIC ........................................................760mW Derating Factor PDIP .......5.6 mW/°C Above 36°C CERDIP................................................6.0mW/°C Operating Temperature Range (Ambient) C Version......................................... 0°C to +70°C E Version ...................................... -40°C to +85°C M Version ...................................-55°C to +125°C Storage Temperature Range ..............-65°C to +150°C *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC4626/TC4627 ELECTRICAL SPECIFICATIONS Electrical Characteristics: TA = +25°C, VDD= 5V, C1 = C2 = C3 10F unless otherwise noted. Symbol Parameter Min Typ Max Units Test Conditions Input VIH Logic 1, High Input Voltage 2.4 — — V VIL Logic 0, Low Input Voltage — — 0.8 V IIN Input Current -1 — 1 A0VV INVDRIVE Output VOH High Output Voltage VBOOST – 0.025 — — V VOL Low Output Voltage — — 0.025 V RO Output Resistance, High — 10 15 IOUT = 10mA, VDD = 5V RO Output Resistance, Low — 8 10 IOUT = 10mA, VDD = 5V IPK Peak Output Current — 1.5 — A Switching Time tR Rise Time — 33 40 nsec Figure 3-1, Figure 3-2 tF Fall Time — 27 35 nsec Figure 3-1, Figure 3-2 tD1 Delay Time — 35 45 nsec Figure 3-1, Figure 3-2 tD2 Delay Time — 45 55 nsec Figure 3-1, Figure 3-2 FMAX Maximum Switching Frequency 1.0 — — MHz VDD = 5V, VBOOST > 8.5V, Figure 3-1 Voltage Booster R3 Voltage Tripler Output Source Resistance — 300 400 IL = 10mA, VDD = 5V R2 Voltage Doubler Output Source Resistance — 120 200 FOSC Oscillator Frequency 12 — 28 kHz VOSC Oscillator Amplitude Measured at C1- 4.5 — 10 V RLOAD = 10k UV @VBOOST Undervoltage Threshold 7.0 7.8 8.5 V VSTART @VBOOST Start Up Voltage 10.5 11.3 12 V VBOOST @VDD = 5V 14.6 — — V No Load |
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