Datenblatt-Suchmaschine für elektronische Bauteile |
|
BAS16HT1G Datenblatt(PDF) 3 Page - ON Semiconductor |
|
BAS16HT1G Datenblatt(HTML) 3 Page - ON Semiconductor |
3 / 4 page BAS16H, SBAS16H http://onsemi.com 3 Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr +10 V 2.0 k 820 W 0.1 mF D.U.T. VR 100 mH 0.1 mF 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE tr tp t 10% 90% IF IR trr t iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit 100 0.2 0.4 VF, FORWARD VOLTAGE (V) 0.6 0.8 1.0 1.2 10 1.0 0.1 TA = 85°C 10 0 VR, REVERSE VOLTAGE (V) 1.0 0.1 0.01 0.001 10 20 30 40 50 0.68 0 VR, REVERSE VOLTAGE (V) 0.64 0.60 0.56 0.52 24 6 8 Figure 2. Forward Voltage Figure 3. Leakage Current Figure 4. Capacitance TA = -40°C TA = 25°C TA = 150°C TA = 125°C TA = 85°C TA = 55°C TA = 25°C Figure 5. Maximum Non−repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values Tp (mSec) 1 0.1 0.01 0.001 0 5 10 15 20 25 10 30 35 40 Based on square wave currents TJ = 25°C prior to surge 0.0001 |
Ähnliche Teilenummer - BAS16HT1G |
|
Ähnliche Beschreibung - BAS16HT1G |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |