FGB30N6S2D datasheet(8/12 Pages) FAIRCHILD

Teilenummer	FGB30N6S2D

Bauteilbeschribung	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to

gate-insulation damage by the electrostatic

discharge of energy through the devices. When

handling these devices, care should be exercised to

assure that the static charge built in the handler’s

body capacitance is not discharged through the

device. With proper handling and application

procedures, however, IGBTs are currently being

extensively used in production by numerous

equipment manufacturers in military, industrial and

consumer applications, with virtually no damage

problems due to electrostatic discharge. IGBTs can

be handled safely if the following basic precautions

are taken:

1. Prior to assembly into a circuit, all leads should be

kept shorted together either by the use of metal

shorting springs or by the insertion into conduc-

tive material such as “ECCOSORBD™ LD26” or

equivalent.

2. When devices are removed by hand from their

carriers, the hand being used should be

grounded by any suitable means - for example,

with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed

from circuits with power on.

5. Gate Voltage Rating - Never exceed the gate-

voltage rating of VGEM. Exceeding the rated VGE

can result in permanent damage to the oxide

layer in the gate region.

6. Gate Termination - The gates of these devices

are essentially capacitors. Circuits that leave the

gate open-circuited or floating should be avoided.

These conditions can result in turn-on of the

device due to voltage buildup on the input

capacitor due to leakage currents or pickup.

7. Gate Protection - These devices do not have an

internal monolithic Zener diode from gate to

emitter. If gate protection is required an external

Zener is recommended.

Operating Frequency Information

Operating frequency information for a typical device

(Figure 3) is presented as a guide for estimating

device performance for a specific application. Other

typical frequency vs collector current (ICE) plots are

possible using the information shown for a typical

unit in Figures 5, 6, 7, 8, 9 and 11. The operating

frequency plot (Figure 3) of a typical device shows

fMAX1 or fMAX2; whichever is smaller at each point.

The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).

Deadtime (the denominator) has been arbitrarily held

to 10% of the on-state time for a 50% duty factor.

Other definitions are possible. td(OFF)I and td(ON)I are

defined in Figure 27. Device turn-off delay can

establish an additional frequency limiting condition

for an application other than TJM. td(OFF)I is important

when controlling output ripple under a lightly loaded

condition.

fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2).

The allowable dissipation (PD) is defined by

PD =(TJM -TC)/RθJC. The sum of device switching

and conduction losses must not exceed PD. A 50%

duty factor was used (Figure 3) and the conduction

losses (PC) are approximated by PC =(VCE xICE)/

2.

EON2 and EOFF are defined in the switching

waveforms shown in Figure 27. EON2 is the integral

of the instantaneous power loss (ICE x VCE) during

turn-on and EOFF is the integral of the instantaneous

power loss (ICE xVCE) during turn-off. All tail losses

are included in the calculation for EOFF; i.e., the

collector current equals zero (ICE = 0)

ECCOSORBD

 is a Trademark of Emerson and Cumming, Inc.

Ähnliche Beschreibung - FGB30N6S2D

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Fairchild Semiconductor	FGK60N6S2D	185Kb / 9P	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
	FGH40N6S2D	208Kb / 9P	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
	FGB30N6S2DT	287Kb / 12P	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
	FGH20N6S2D	232Kb / 9P	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
	FGH50N6S2D	195Kb / 9P	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
	FGP20N6S2D	231Kb / 9P	600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
Intersil Corporation	HGT5A40N60A4D	100Kb / 9P	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode February 2000
	HGT1S3N60A4DS	130Kb / 10P	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 2000
	HGTG20N60A4D	351Kb / 9P	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode October 1999
Fairchild Semiconductor	HGTG20N60A4D	204Kb / 9P	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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