Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC4226-T1 Datenblatt(PDF) 1 Page - Renesas Technology Corp |
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2SC4226-T1 Datenblatt(HTML) 1 Page - Renesas Technology Corp |
1 / 8 page R09DS0022EJ0200 Rev.2.00 Page 1 of 6 Jun 29, 2011 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. PreliminaryData Sheet 2SC4226 NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • 3-pin super minimold package ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form 2SC4226 2SC4226-A 50 pcs (Non reel) • 8 mm wide embossed taping 2SC4226-T1 2SC4226-T1-A 3-pin super Minimold (Pb-Free) 3 kpcs/reel • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3 V Collector Current IC 100 mA Total Power Dissipation Ptot Note 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Free air CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. <R> R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 |
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