Datenblatt-Suchmaschine für elektronische Bauteile |
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TPS1120DG4 Datenblatt(PDF) 1 Page - Texas Instruments |
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TPS1120DG4 Datenblatt(HTML) 1 Page - Texas Instruments |
1 / 15 page TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 – REVISED AUGUST 1995 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D Low rDS(on) . . . 0.18 Ω at VGS = –10 V D 3-V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = –1.5 V Max D ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOS ™ process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of –1.5 V and an IDSS of only 0.5 µA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages. The TPS1120 is characterized for an operating junction temperature range, TJ, from –40°C to 150°C. AVAILABLE OPTIONS PACKAGED DEVICES† CHIP FORM TJ SMALL OUTLINE (D) CHIP FORM (Y) –40 °C to 150°C TPS1120D TPS1120Y † The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS1120DR). The chip form is tested at 25 °C. Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits. LinBiCMS is a trademark of Texas Instruments Incorporated. Copyright © 1995, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. 1 2 3 4 8 7 6 5 1SOURCE 1GATE 2SOURCE 2GATE 1DRAIN 1DRAIN 2DRAIN 2DRAIN D PACKAGE (TOP VIEW) |
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