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TPS1120DR Datenblatt(PDF) 10 Page - Texas Instruments |
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TPS1120DR Datenblatt(HTML) 10 Page - Texas Instruments |
10 / 15 page TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A – MARCH 1994 – REVISED AUGUST 1995 10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 THERMAL INFORMATION The profile of the heat sinks used for thermal measurements is shown in Figure 14. Board type is FR4 with 1-oz copper and 1-oz tin/lead (63/37) plate. Use of vias or through-holes to enhance thermal conduction was avoided. Figure 15 shows a family of RθJA curves. The RθJA was obtained for various areas of heat sinks while subject to air flow. Power remained fixed at 0.25 W per device or 0.50 W per package. This testing was done at 25 °C. As Figure 14 illustrates, there are two separated heat sinks for each package. Each heat sink is coupled to the lead that is internally tied to a single MOSFET source and is half the total area, as shown in Figure 15. For example, if the total area shown in Figure 15 is 4 cm2, each heat sink is 2 cm2. 1DRAIN 2DRAIN 1SOURCE 1GATE 2GATE The Combined Area of These Two Heat Sinks Is 4 cm2 TPS1120D IC HS: 4 cm2 8P SOIC Thermal Analysis ≅ 2 cm 2SOURCE Figure 14. Profile of Heat Sinks 70 60 50 0 50 100 150 80 90 THERMAL RESISTANCE, JUNCTION-TO-AMBIENT vs AIRFLOW, 25 °C 100 200 250 300 Airflow, 25 °C – ft/min 110 120 130 140 150 TJ = 25°C P = 0.5 W Heat Sink Areas as Shown 0.5 cm2 1 cm2 2 cm2 4 cm2 0 cm2 8 cm2 Figure 15 |
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