Datenblatt-Suchmaschine für elektronische Bauteile |
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FJV3110R Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FJV3110R Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IE=1mA, IB=0 40 V ICBO Collector Cut-off Current VCB=30V, IE=0 0.1 µA hFE DC Current Gain VCE=5V, IC=1mA 100 600 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.3 V Cob Output Capacitance VCB=10V, IE=0 f=1MHz 3.7 pF fT Current Gain Bandwidth Product VCE=10V, IC=5mA 250 MHz R Input Resistor 7 10 13 K Ω FJV3110R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10K Ω) • Complement to FJV4110R Equivalent Circuit B E C R R30 Marking SOT-23 1. Base 2. Emitter 3. Collector 1 2 3 |
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Ähnliche Beschreibung - FJV3110R |
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