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STU8NM50N Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STU8NM50N
Bauteilbeschribung  N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STD8NM50N, STP8NM50N, STU8NM50N
Electrical ratings
Doc ID 17413 Rev 6
3/19
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
500
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
5
A
ID
Drain current (continuous) at TC = 100 °C
3
A
PTOT
Total dissipation at TC = 25 °C
45
W
dv/dt (1)
1.
ISD ≤ 7 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDS= 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
DPAK
IPAK
TO-220
Rthj-case Thermal resistance junction-case max
2.78
°C/W
Rthj-amb
Thermal resistance junction-ambient max
100
62.5
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
50
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
2A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
140
mJ


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