STFW6N120K3 datasheet(3/17 Pages) STMICROELECTRONICS

Teilenummer	STFW6N120K3

Bauteilbeschribung	N-channel 1200 V, 1.95 Ohm typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages

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STFW6N120K3, STP6N120K3, STW6N120K3

Electrical ratings

Doc ID 15572 Rev 3

3/17

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-3PF

TO-220

TO-247

VGS

Gate- source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

6

A

ID

Drain current (continuous) at TC = 100 °C

3.8

A

IDM

(1)

1.

Pulse width limited by safe operating area

Drain current (pulsed)

20

A

PTOT

Power dissipation at TC = 25 °C

63

150

W

IAR

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

7A

EAS

Single pulse avalanche energy (starting

TJ = 25 °C, ID = IAR, VDD = 50 V)

180

mJ

ESD

Gate-source human body model

(C = 100 pF, R = 1.5 k

Ω)

6kV

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s, TC = 25 °C)

3500

V

Tstg

Storage temperature

-55 to 150

°C

TJ

Operating junction temperature

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-3PF

TO-220 TO-247

Rthj-case

Thermal resistance junction-case

1.98

0.83

°C/W

Rthj-amb

Thermal resistance junction-ambient max

50

62.5

50

°C/W

TJ

Maximum lead temperature for soldering

purpose

300

°C

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Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
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