Datenblatt-Suchmaschine für elektronische Bauteile |
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FMC7G15US60 Datenblatt(PDF) 6 Page - Fairchild Semiconductor |
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FMC7G15US60 Datenblatt(HTML) 6 Page - Fairchild Semiconductor |
6 / 9 page ©2001 Fairchild Semiconductor Corporation FMC7G15US60 Rev. A1 Fig 14. Gate Charge Characteristics Fig 13. Switching Loss vs. Collector Current Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Fig 17. RBSOA Characteristics Fig 18. Transient Thermal Impedance 1 10 100 1000 1 10 50 Safe Operating Area V GE = 20V, TC = 100 ℃ Collector-Emitter Voltage, V CE [V] 5 10 1520 2530 100 1000 Eoff Eon Eoff Common Emitter V GE = ± 15V, R G = 13Ω T C = 25℃ ━━ T C = 125 ℃ ------ Collector Current, I C [A] 0 102030 4050 0 3 6 9 12 15 200 V V CC = 100 V 300 V Common Emitter R L = 20Ω T C = 25 ℃ Gate Charge, Q g [ nC ] 0.1 1 10 100 1000 0.01 0.1 1 10 100 Single Nonrepetitive Pulse T C = 25 ℃ Curves must be derated linearly with increase in temperature I C MAX. (Continuous) I C MAX. (Pulsed) DC Operation 1㎳ 100us 50us Collector-Emitter Voltage, V CE [V] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 10 IGBT : DIODE : Rectangular Pulse Duration [sec] 0 100 200 300 400 500 600 700 0.1 1 10 50 Single Nonrepetitive Pulse T J ≤ 125℃ V GE = 15V R G = 13 Ω Collector-Emitter Voltage, V CE [V] |
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Ähnliche Beschreibung - FMC7G15US60 |
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