Datenblatt-Suchmaschine für elektronische Bauteile |
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LM2660MM Datenblatt(PDF) 2 Page - Texas Instruments |
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LM2660MM Datenblatt(HTML) 2 Page - Texas Instruments |
2 / 20 page LM2660 SNVS135D – SEPTEMBER 1999 – REVISED MAY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Supply Voltage (V+ to GND, or GND to OUT) 6V LV (OUT − 0.3V) to (GND + 3V) FC, OSC The least negative of (OUT − 0.3V) or (V+ − 6V) to (V+ + 0.3V) V+ and OUT Continuous Output Current 120 mA Output Short-Circuit Duration to GND (3) 1 sec. Package SOIC (D) VSSOP (DGK) Power Dissipation (TA = 25°C) (4) 735 mW 500 mW TJ Max (4) 150°C 150°C θJA (4) 170°C/W 250°C/W Operating Junction Temperature Range −40°C to +85°C Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering, 10 seconds) 300°C ESD Rating 2 kV (1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. (3) OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged. (4) The maximum allowable power dissipation is calculated by using PDMax = (TJMax − TA)/θJA, where TJMax is the maximum junction temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance of the specified package. 2 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated Product Folder Links: LM2660 |
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