LM2660

SNVS135D – SEPTEMBER 1999 – REVISED MAY 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage (V+ to GND, or GND to OUT)

6V

LV

(OUT

− 0.3V) to (GND + 3V)

FC, OSC

The least negative of (OUT

− 0.3V)

or (V+

− 6V) to (V+ + 0.3V)

V+ and OUT Continuous Output Current

120 mA

1 sec.

Package

SOIC (D)

VSSOP (DGK)

Power Dissipation

(4)

735 mW

500 mW

(4)

150°C

150°C

(4)

170°C/W

250°C/W

Operating Junction Temperature Range

−40°C to +85°C

Storage Temperature Range

−65°C to +150°C

Lead Temperature (Soldering, 10 seconds)

300°C

ESD Rating

2 kV

(1)

Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when

operating the device beyond its rated operating conditions.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be

avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged.

(4)

2

Submit Documentation Feedback

Copyright © 1999–2013, Texas Instruments Incorporated

Product Folder Links: LM2660