 |
Datenblatt-Suchmaschine für elektronische Bauteile |
|
|
Datenblatt-Suchmaschine für elektronische Bauteile |
|
FQD19N10L Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
FQD19N10L Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
|
|
2 / 9 page  Rev. A, August 2000 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2000 Fairchild Semiconductor International Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.35mH, IAS = 15.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 19A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.09 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µA VDS = 80 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.8 A VGS = 5 V, ID = 7.8 A -- 0.074 0.082 0.10 0.11 Ω gFS Forward Transconductance VDS = 30 V, ID = 7.8 A -- 14 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 670 870 pF Coss Output Capacitance -- 160 210 pF Crss Reverse Transfer Capacitance -- 35 45 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 50 V, ID = 19 A, RG = 25 Ω -- 14 38 ns tr Turn-On Rise Time -- 410 830 ns td(off) Turn-Off Delay Time -- 20 50 ns tf Turn-Off Fall Time -- 140 290 ns Qg Total Gate Charge VDS = 80 V, ID = 19 A, VGS = 5 V -- 14 18 nC Qgs Gate-Source Charge -- 2.9 -- nC Qgd Gate-Drain Charge -- 9.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 15.6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 62.4 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15.6 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 19 A, dIF / dt = 100 A/µs -- 80 -- ns Qrr Reverse Recovery Charge -- 0.195 -- µC |
Ähnliche Teilenummer - FQD19N10L |
|
Ähnliche Beschreibung - FQD19N10L |
|
|
|
Link URL |
| Privatsphäre und Datenschutz |
| ALLDATASHEETDE.COM |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
German ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
