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FQD4P40 Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FQD4P40
Bauteilbeschribung  400V P-Channel MOSFET
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD4P40 Datenblatt(HTML) 2 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A, August 2000
Elerical Characteristics
TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 62mH, IAS = -2.7A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -3.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300
µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-400
--
--
V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
--
0.36
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -400 V, VGS = 0 V
--
--
-1
µA
VDS = -320 V, TC = 125°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-3.0
--
-5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -1.35 A
--
2.44
3.1
gFS
Forward Transconductance
VDS = -50 V, ID = -1.35 A
--
2.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
520
680
pF
Coss
Output Capacitance
--
80
105
pF
Crss
Reverse Transfer Capacitance
--
11
15
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = -200 V, ID = -3.5 A,
RG = 25 Ω
--
13
35
ns
tr
Turn-On Rise Time
--
55
120
ns
td(off)
Turn-Off Delay Time
--
35
80
ns
tf
Turn-Off Fall Time
--
37
85
ns
Qg
Total Gate Charge
VDS = -320 V, ID = -3.5 A,
VGS = -10 V
--
18
23
nC
Qgs
Gate-Source Charge
--
3.8
--
nC
Qgd
Gate-Drain Charge
--
9.4
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-2.7
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-10.8
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -2.7 A
--
--
-5.0
V
trr
Reverse Recovery Time
VGS = 0 V, IS = -3.5 A,
dIF / dt = 100 A/µs
--
260
--
ns
Qrr
Reverse Recovery Charge
--
1.4
--
µC


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