Datenblatt-Suchmaschine für elektronische Bauteile |
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BCX69E6327 Datenblatt(PDF) 1 Page - Infineon Technologies AG |
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BCX69E6327 Datenblatt(HTML) 1 Page - Infineon Technologies AG |
1 / 7 page 2011-10-05 1 BCX69... 1 2 2 3 PNP Silicon AF Transistors • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BCX68 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BCX69-10 BCX69-16 BCX69-25 CF CG CH 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E SOT89 SOT89 SOT89 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 20 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 5 Collector current IC 1 A Peak collector current, tp ≤ 10 ms ICM 2 Base current IB 100 mA Peak base current IBM 200 Total power dissipation- TS = 114 °C Ptot 3 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 12 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) |
Ähnliche Teilenummer - BCX69E6327 |
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Ähnliche Beschreibung - BCX69E6327 |
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