Datenblatt-Suchmaschine für elektronische Bauteile |
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FQP18N20V2 Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
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FQP18N20V2 Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2002 Fairchild Semiconductor Corporation Rev. B, August 2002 25 50 75 100 125 150 0 5 10 15 20 T C, Case Temperature [ ℃] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 9 A T J, Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ o C] Typical Characteristics (Continued) Figure 9-1. Maximum Safe Operating Area for FQP18N20V2 Figure 9-2. Maxiumum Safe Operating Area for FQPF18N20V2 Figure 8. On-Resistance Variation Figure 10. Maximum Drain Current vs. Case Temperature 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100 ms DC 10 ms 1 ms 100 us Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 oC 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 DC 10 ms 1 ms 100 us Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] Figure 7. Breakdown Voltage Variation vs. Temperature |
Ähnliche Teilenummer - FQP18N20V2 |
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Ähnliche Beschreibung - FQP18N20V2 |
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