Datenblatt-Suchmaschine für elektronische Bauteile |
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FQP9N30 Datenblatt(PDF) 3 Page - Fairchild Semiconductor |
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FQP9N30 Datenblatt(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page ©2000 Fairchild Semiconductor International Rev. A, May 2000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test 25℃ V SD, Source-Drain voltage [V] 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 ※ Note : T J = 25 ℃ V GS = 20V V GS = 10V I D , Drain Current [A] 2 468 10 10 -1 10 0 10 1 150℃ 25℃ -55℃ ※ Notes : 1. V DS = 50V 2. 250μs Pulse Test V GS, Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ※ Notes : 1. 250μs Pulse Test 2. T C = 25 ℃ V DS, Drain-Source Voltage [V] 036 9 12 15 18 0 2 4 6 8 10 12 V DS = 150V V DS = 60V V DS = 240V ※ Note : I D = 9.0 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
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Ähnliche Beschreibung - FQP9N30 |
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