Datenblatt-Suchmaschine für elektronische Bauteile |
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FQPF3P20 Datenblatt(PDF) 3 Page - Fairchild Semiconductor |
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FQPF3P20 Datenblatt(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page 3 10 -1 10 0 10 1 0 100 200 300 400 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ¡Ø Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss -V DS, Drain-Source Voltage [V] Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source Voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward Voltage Fig 3. On-Resistance vs. Drain Current 02468 0 2 4 6 8 10 ¡Ø Note : T J = 25¡É V GS = - 20V V GS = - 10V -I D , Drain Current [A] 0 1 234567 0 2 4 6 8 10 12 V DS = -100V V DS = -40V V DS = -160V ¡Ø Note : I D = -2.8 A Q G , Total Gate Charge [nC] 10 -1 10 0 10 1 10 -1 10 0 V GS Top : -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V ¡Ø Note : 1. 250¥ìs Pulse Test 2. T C = 25¡É -V DS, Drain-Source Voltage [V] 2 468 10 10 -1 10 0 ¡Ø Note 1. V DS = -40V 2. 250¥ìs Pulse Test -55¡É 150¡É 25¡É -V GS , Gate-Source Voltage [V] 0.4 0.8 1.2 1.6 2.0 2.4 2.8 10 -1 10 0 25¡É 150¡É ¡Ø Note : 1. V GS = 0V 2. 250¥ìs Pulse Test -V SD , Source-Drain Voltage [V] QFET P-CHANNEL FQPF3P20 |
Ähnliche Teilenummer - FQPF3P20 |
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Ähnliche Beschreibung - FQPF3P20 |
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