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IRF9540NSTRLPBF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRF9540NSTRLPBF
Bauteilbeschribung  Advanced Process Technology
Download  11 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF9540NSTRLPBF Datenblatt(HTML) 1 Page - International Rectifier

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IRF9540NSPbF
IRF9540NLPbF
HEXFET® Power MOSFET
PD - 96030
VDSS = -100V
RDS(on) = 117mΩ
ID = -23A
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Some Parameters are Different from
IRF9540NS/L
l P-Channel
l Lead-Free
09/30/05
S
D
G
www.irf.com
1
D2Pak
IRF9540NSPbF
TO-262
IRF9540NLPbF
S
G
S
D
G
D
GD
S
Gate
Drain
Source
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
D
D
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Maximum Power Dissipation
W
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.1
°C/W
RθJA
Junction-to-Ambient (PCB Mount, steady state)
g
–––
40
110
0.9
± 20
11
84
-14
300 (1.6mm from case )
-55 to + 150
-13
Max.
-23
-14
-92
3.1


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