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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FQPF4N90 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FQPF4N90 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  Rev. B, October 2001 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2001 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 172mH, IAS = 2.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.9 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA VDS = 720 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.25 A -- 2.7 3.3 Ω gFS Forward Transconductance VDS = 50 V, ID = 1.25 A -- 2.6 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 860 1100 pF Coss Output Capacitance -- 90 120 pF Crss Reverse Transfer Capacitance -- 9.5 12.5 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 450 V, ID = 4.2 A, RG = 25 Ω -- 25 60 ns tr Turn-On Rise Time -- 70 150 ns td(off) Turn-Off Delay Time -- 45 100 ns tf Turn-Off Fall Time -- 40 90 ns Qg Total Gate Charge VDS = 720 V, ID = 4.2 A, VGS = 10 V -- 24 30 nC Qgs Gate-Source Charge -- 5.8 -- nC Qgd Gate-Drain Charge -- 11.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 10 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 4.2 A, dIF / dt = 100 A/µs -- 440 -- ns Qrr Reverse Recovery Charge -- 3.3 -- µC |
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Ähnliche Beschreibung - FQPF4N90 |
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