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2N5064G Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer 2N5064G
Bauteilbeschribung  Sensitive Gate Silicon Controlled Rectifiers
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2N5064G Datenblatt(HTML) 3 Page - ON Semiconductor

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2N5060 Series
http://onsemi.com
3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak on State Voltage
IH
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)
120
50
60
70
80
90
100
110
0
0.1
0.2
0.3
0.4
130
0.5
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
a
dc
110
30
50
70
90
130
dc
a
0
0.1
0.2
0.3
0.4
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
a = 30°
a = 30°
60
° 90°
90
°
120
°
120
°
180
°
CASE MEASUREMENT
POINT - CENTER OF
FLAT PORTION
60
°
180
°
TYPICAL PRINTED
CIRCUIT BOARD
MOUNTING
a = CONDUCTION ANGLE
a = CONDUCTION ANGLE
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
CURRENT DERATING


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