FDS89161LZ datasheet(1/7 Pages) FAIRCHILD

Teilenummer	FDS89161LZ

Bauteilbeschribung	Max rDS(on) = 105 m廓 at VGS = 10 V, ID = 2.7 A

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

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June 2011

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www.fairchildsemi.com

FDS89161LZ Rev. C4

FDS89161LZ

Dual N-Channel PowerTrench® MOSFET

100 V, 2.7 A, 105 m

Ω

Features

Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A

Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A

High performance trench technology for extremely low rDS(on)

High power and current handling capability in a widely used

surface mount package

CDM ESD protection level > 2KV typical (Note 4)

100% UIL Tested

RoHS Compliant

General Description

This

N-Channel logic Level MOSFETs are produced using

Fairchild Semiconductor‘s advanced Power Trench® process

that has been special tailored to minimize the on-state

resisitance and yet maintain superior switching performance.

G-S zener has been added to enhance ESD voltage level

.

Application

DC-DC conversion

MOSFET Maximum Ratings T

A = 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

VDS

Drain to Source Voltage

100

V

VGS

Gate to Source Voltage

±20

V

ID

Drain Current -Continuous

2.7

A

-Pulsed

15

EAS

Single Pulse Avalanche Energy

(Note 3)

13

mJ

PD

Power Dissipation

TC = 25 °C

31

W

Power Dissipation

TA = 25 °C

(Note1a)

1.6

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

RθJC

Thermal Resistance, Junction to Case

(Note 1)

4.0

°C/W

RθJA

Thermal Resistance, Junction to Ambient

(Note 1a)

78

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDS89161LZ

SO-8

13 ’’

12 mm

2500 units

G2

S1

G1

S2

D2

D1

Pin 1

SO-8

D1

D2

S2

S1

G1

G2

4

3

2

1

5

6

7

8

Q2

Q1

Ähnliche Beschreibung - FDS89161LZ

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Fairchild Semiconductor	FDMS86252	268Kb / 7P	Max rDS(on) = 51 m廓 at VGS = 10 V, ID = 4.6 A
	FDMA1430JP	222Kb / 8P	Max rDS(on) = 90 m廓 at VGS = -4.5 V, ID = -2.9 A
	FQA13N80-F109	1Mb / 8P	12.6 A, 800 V, RDS(on) = 750 m廓 (Max.) @ VGS = 10 VID = 6.8 A
	BSS84-NL	144Kb / 5P	??.13A, ??0V. RDS(ON) = 10廓 @ VGS = ?? V
	FDPF16N50UT	826Kb / 9P	R DS(on) = 370 m廓 ( Typ.) @ VGS = 10 V, ID = 7.5 A
	FQB34P10TM-F085	1Mb / 8P	-33.5A, -100V, RDS(on) = 0.06廓 @VGS = -10 V
International Rectifier	IRF7476PBF	162Kb / 8P	HEXFET Power MOSFET ( VDSS = 12V , RDS(on) max = 8.0m廓@VGS = 4.5V , ID = 15A )
	IRF7821GPBF	293Kb / 10P	Very Low RDS(on) at 4.5V VGS
	IRFP460APBF	195Kb / 9P	SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27廓 , ID=20A )
	IRFR13N20DPBF	688Kb / 11P	SMPS MOSFET ( VDSS=200V , RDS(on)max=0.235廓 , ID=13A )

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