SI7852DP-T1-GE3 datasheet(3/8 Pages) VISHAY

Teilenummer	SI7852DP-T1-GE3

Bauteilbeschribung	N-Channel 80-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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3 / 8 page

Document Number: 71627

S09-0268-Rev. E, 16-Feb-09

www.vishay.com

3

Vishay Siliconix

Si7852DP

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.00

0.01

0.02

0.03

0.04

0

10203040

50

ID - Drain Current (A)

VGS = 6 V

VGS = 10 V

0

4

8

12

16

20

0

15304560

VDS = 40 V

ID = 10 A

Qg - Total Gate Charge (nC)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100

10

0.01

VSD - Source-to-Drain Voltage (V)

1

0.1

TJ = 150 °C

TJ = 25 °C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

500

1000

1500

2000

2500

3000

0

20406080

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.0

0.5

1.0

1.5

2.0

2.5

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 10 A

TJ - Junction Temperature (°C)

0.00

0.02

0.04

0.06

0.08

0

2468

10

ID = 10 A

VGS - Gate-to-Source Voltage (V)

Ähnliche Beschreibung - SI7852DP-T1-GE3

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	SIR880DP_1209	504Kb / 13P	N-Channel 80 V (D-S) MOSFET Rev. B, 22-Nov-10
DinTek Semiconductor Co...	DTM4830	311Kb / 8P	N-Channel 80 V (D-S) MOSFET
Analog Power	AM30N08-80D	79Kb / 3P	N-Channel 80-V (D-S) MOSFET
Vishay Siliconix	SI7852DP	40Kb / 5P	N-Channel 80-V (D-S) MOSFET Rev. A, 28-May-01
Analog Power	AM90N08-05P	369Kb / 5P	N-Channel 80-V (D-S) MOSFET
VBsemi Electronics Co.,...	60N75	1Mb / 9P	N-Channel 80 V (D-S) MOSFET
Vishay Siliconix	SI4896DY	182Kb / 8P	N-Channel 80-V (D-S) MOSFET Rev. C, 18-May-09
VBsemi Electronics Co.,...	AOB470L	1Mb / 9P	N-Channel 80 V (D-S) MOSFET
	SUD40N08-16-E3	999Kb / 9P	N-Channel 80 V (D-S) MOSFET
	PHP79NQ08LT	999Kb / 8P	N-Channel 80 V (D-S) MOSFET
Vishay Telefunken	SIR826ADP	381Kb / 13P	N-Channel 80 V (D-S) MOSFET

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Ähnliche Beschreibung - SI7852DP-T1-GE3

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