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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7103QTRPBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRF7103QTRPBF Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF7103QPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.5A, VGS = 0V trr Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 1.5A Qrr Reverse Recovery Charge ––– 45 67 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A 12 3.0 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board Starting TJ = 25°C, L = 4.9mH RG = 25Ω, IAS = 3.0A. (See Figure 12).
ISD ≤ 2.0A, di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 50 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 130 VGS = 10V, ID = 3.0A ––– ––– 200 VGS = 4.5V, ID = 1.5A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 3.4 ––– ––– S VDS = 15V, ID = 3.0A ––– ––– 2.0 VDS = 40V, VGS = 0V ––– ––– 25 VDS = 40V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– 10 15 ID = 2.0A Qgs Gate-to-Source Charge ––– 1.2 ––– nC VDS = 40V Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 ––– VGS = 10V td(on) Turn-On Delay Time ––– 5.1 ––– VDD = 25V tr Rise Time ––– 1.7 ––– ID = 1.0A td(off) Turn-Off Delay Time ––– 15 ––– RG = 6.0 Ω tf Fall Time ––– 2.3 ––– RD = 25 Ω Ciss Input Capacitance ––– 255 ––– VGS = 0V Coss Output Capacitance ––– 69 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 29 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns S D G |
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