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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFB7430PBF Datenblatt(PDF) 3 Page - International Rectifier |
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IRFB7430PBF Datenblatt(HTML) 3 Page - International Rectifier |
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3 / 9 page  IRFB7430PbF www.irf.com 3 S D G Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 150 ––– ––– S Qg Total Gate Charge ––– 300 460 nC Qgs Gate-to-Source Charge ––– 77 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 98 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 202 ––– td(on) Turn-On Delay Time ––– 32 ––– ns tr Rise Time ––– 105 ––– td(off) Turn-Off Delay Time ––– 160 ––– tf Fall Time ––– 100 ––– Ciss Input Capacitance ––– 14240 ––– pF Coss Output Capacitance ––– 2130 ––– Crss Reverse Transfer Capacitance ––– 1460 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ià ––– 2605 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) h ––– 2920 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 394 A (Body Diode) ISM Pulsed Source Current ––– ––– 1576 A (Body Diode) Ãd VSD Diode Forward Voltage ––– 0.86 1.2 V dv/dt Peak Diode Recovery f ––– 2.7 ––– V/ns trr Reverse Recovery Time ––– 52 ––– ns TJ = 25°C VR = 34V, ––– 52 ––– TJ = 125°C IF = 100A Qrr Reverse Recovery Charge ––– 97 ––– nC TJ = 25°C di/dt = 100A/μs g ––– 97 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.3 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) TJ = 175°C, IS = 100A, VDS = 40V ID = 30A RG = 2.7 VGS = 10V g VDD = 20V ID = 100A, VDS =0V, VGS = 10V Conditions VDS = 10V, ID = 100A VDS =20V ID = 100A TJ = 25°C, IS = 100A, VGS = 0V g integral reverse p-n junction diode. MOSFET symbol showing the Conditions VGS = 10V g VGS = 0V VDS = 25V ƒ = 1.0 MHz VGS = 0V, VDS = 0V to 32V i VGS = 0V, VDS = 0V to 32V h |
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