STU95N3LLH6 datasheet(6/18 Pages) STMICROELECTRONICS

Teilenummer	STU95N3LLH6

Bauteilbeschribung	N-channel 30 V, 0.0037 廓 , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET

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Electrical characteristics

STx95N3LLH6

6/18

Doc ID 15228 Rev 3

2.1

Electrical characteristics (curves)

Figure 2.

Safe operating area

Figure 3.

Thermal impedance

Figure 4.

Output characteristics

Figure 5.

Transfer characteristics

Figure 6.

Normalized BVDSS vs temperature

Figure 7.

Static drain source on resistance

ID

100

10

1

0.1

1

VDS(V)

10

(A)

Oper

ation

in

thi

s

are

a i

s

Limited

by

m

ax

R

DS

(on)

100µs

1ms

10ms

Tj=175°C

Tc=25°C

Sinlge

pulse

AM03376v1

10

-5

10

-4

10

-3

10

-2

10

-1

tp(s)

10

-2

10

-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-c

δ=tp/τ

tp

τ

Single pulse

δ=0.5

280dpc

ID

150

100

50

0

4

VDS(V)

(A)

2

200

250

VGS=10V

3V

4V

5V

6V

7V

300

AM03379v1

ID

150

100

50

0

4

VGS(V)

(A)

2

200

250

VDS=2V

300

8

6

AM03380v1

BVDSS

-55

-5

TJ(°C)

(norm)

-30

70

20

45

95

0.90

0.95

1.00

1.05

120 145

@250µA

AM03381v1

RDS(on)

3

2

1

0

20

ID(A)

(m

Ω)

10

30

4

5

6

7

VGS=10V

40

AM03382v1

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