Datenblatt-Suchmaschine für elektronische Bauteile |
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STFI4N62K3 Datenblatt(PDF) 8 Page - STMicroelectronics |
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STFI4N62K3 Datenblatt(HTML) 8 Page - STMicroelectronics |
8 / 19 page Electrical characteristics STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 8/19 Doc ID 17548 Rev 4 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Maximum avalanche energy vs starting Tj Figure 17. Normalized BVDSS vs temperature Figure 18. Source-drain diode forward characteristics VGS(th) 1.00 0.90 0.80 0.70 -75 TJ(°C) (norm) -25 1.10 75 25 125 ID = 50 µA AM07181v1 RDS(on) 2.0 1.5 1.0 0.5 -75 TJ(°C) (norm) -25 25 75 125 2.5 VGS = 10 V ID = 1.9 A AM07182v1 EAS 0 40 TJ(°C) (mJ) 20 100 60 80 0 10 20 30 40 120 140 50 60 70 80 100 110 120 ID=3.8 A VDD=50 V 90 AM07184v1 BVDSS -75 TJ(°C) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 ID = 1 mA AM07183v1 VSD 0 2 ISD(A) (V) 1 5 3 4 0.1 0.2 0.3 0.4 0.5 0.6 0.7 TJ=25°C TJ=150°C TJ=-50°C 0.8 0.9 1.0 AM08888v1 |
Ähnliche Teilenummer - STFI4N62K3 |
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Ähnliche Beschreibung - STFI4N62K3 |
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