Datenblatt-Suchmaschine für elektronische Bauteile |
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STD155N3LH6 Datenblatt(PDF) 4 Page - STMicroelectronics |
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STD155N3LH6 Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STB155N3LH6, STD155N3LH6 4/18 Doc ID 17893 Rev 3 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 5. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS= 0) ID = 250 µA 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V VDS = 30 V,Tc = 125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ± 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 12.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A 2.4 3.0 m Ω VGS = 5 V, ID = 40 A 3.2 4.0 m Ω Table 6. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS = 0 - 3800 725 420 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15 V, ID = 80 A VGS = 10 V (see Figure 14) - 80 15 15 - nC nC nC RG Gate input resistance f = 1 MHz gate bias Bias = 0 test signal level = 20 mV open drain -1.5 - Ω |
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