FDD86250 datasheet(2/6 Pages) FAIRCHILD

Teilenummer	FDD86250

Bauteilbeschribung	FDD86250 N-Channel Shielded Gate PowerTrench짰 MOSFET 150 V, 50 A, 22 m廓

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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2 / 6 page

FDD86250 Rev.C1

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2

Electrical Characteristics T

J = 25 °C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V

150

V

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, referenced to 25 °C

106

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 120 V, VGS = 0 V

1

μA

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

±100

nA

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 μA

2.0

2.9

4.0

V

ΔVGS(th)

ΔTJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 μA, referenced to 25 °C

-10

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 8 A

18.4

22

m

Ω

VGS = 6 V, ID = 6.5 A

21.4

31

VGS = 10 V, ID = 8 A, TJ = 125 °C

35.8

45

gFS

Forward Transconductance

VDS = 10 V, ID = 8 A

28

S

Ciss

Input Capacitance

VDS = 75 V, VGS = 0 V,

f = 1 MHz

1585

2110

pF

Coss

Output Capacitance

167

225

pF

Crss

Reverse Transfer Capacitance

7

15

pF

Rg

Gate Resistance

0.6

Ω

td(on)

Turn-On Delay Time

VDD = 75 V, ID = 8 A,

VGS = 10 V, RGEN = 6 Ω

11.2

20

ns

tr

Rise Time

3.7

10

ns

td(off)

Turn-Off Delay Time

20

32

ns

tf

Fall Time

410

ns

Qg

Total Gate Charge

VGS = 0 V to 10 V

VDD = 75 V,

ID = 8 A

23

33

nC

Qg

Total Gate Charge

VGS = 0 V to 5 V

12.8

18

nC

Qgs

Gate to Source Charge

6.7

nC

Qgd

Gate to Drain “Miller” Charge

4.7

nC

VSD

Source-Drain Diode Forward Voltage

VGS = 0 V, IS = 8 A

(Note 2)

0.78

1.3

V

VGS = 0 V, IS = 2.6 A

(Note 2)

0.73

1.2

trr

Reverse Recovery Time

IF = 8 A, di/dt = 100 A/μs

71

113

ns

Qrr

Reverse Recovery Charge

104

166

nC

Notes:

1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

RθJC is guaranteed by design while RθJA is determined by the user’s board design.

2: Pulse Test: Pulse Width < 300

μs, Duty cycle < 2.0%.

3: Starting TJ = 25 °C, L = 1.0 mH, IAS = 19 A, VDD = 135 V, VGS = 10 V.

a) 40 °C/W when mounted on a

1 in2 pad of 2 oz copper

b) 96 °C/W when mounted on

a minimum pad

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