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BAS16VY Datenblatt(PDF) 6 Page - NXP Semiconductors

Teilenummer BAS16VY
Bauteilbeschribung  High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
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BAS16_SER_5
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 25 August 2008
6 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB with 60
µm copper strip line.
[3]
Reflow soldering is the only recommended soldering method.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5]
Single diode loaded.
[6]
Soldering point of cathode tab.
[7]
Soldering points at pins 4, 5 and 6.
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
[2]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[3]
When switched from IF = 10 mA; tr =20ns.
Rth(j-sp)
thermal resistance from
junction to solder point
BAS16H
[6] --70
K/W
BAS16J
[6] --55
K/W
BAS16T
-
-
350
K/W
BAS16VY
[5][7] -
-
260
K/W
BAS316
[6] -
-
150
K/W
BAS516
[6] -
-
120
K/W
Table 7.
Thermal characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 8.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
[1]
IF = 1 mA
-
-
715
mV
IF = 10 mA
-
-
855
mV
IF = 50 mA
--1
V
IF = 150 mA
-
-
1.25
V
IR
reverse current
VR = 25 V
--30
nA
VR = 80 V
-
-
0.5
µA
VR = 25 V; Tj = 150 °C
--30
µA
VR = 80 V; Tj = 150 °C
--50
µA
Cd
diode capacitance
f = 1 MHz; VR =0V
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
-
-
1.5
pF
BAS516
-
-
1
pF
trr
reverse recovery time
[2] --4
ns
VFR
forward recovery voltage
[3] -
-
1.75
V


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