Datenblatt-Suchmaschine für elektronische Bauteile |
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HUFA75429D3S Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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HUFA75429D3S Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©2002 Fairchild Semiconductor Corporation Rev. A Package Marking and Ordering Information Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (V GS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 1.56mH, IAS = 20A Device Marking Device Package Reel Size Tape Width Quantity 75429D3 HUFA75429D3ST TO-252 330mm 16mm 2500 units 75429D3 HUFA75429D3S TO-252 Tube N/A 75 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V IDSS Zero Gate Voltage Drain Current VDS = 55V, VGS = 0V - - 1 µA VDS = 45V VGS = 0V TC=150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2 - 4 V rDS(ON) Drain to Source On Resistance ID = 20A, VGS = 10V - 0.021 0.025 Ω ID = 20A, VGS = 10V, TJ = 175 oC - 0.043 0.054 CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 1090 - pF COSS Output Capacitance - 376 - pF CRSS Reverse Transfer Capacitance - 102 - pF Qg(TOT) Total Gate Charge at 20V VGS = 0V to 20V VDD = 30V ID = 20A Ig = 1.0mA 65 85 nC Qg(10) Total Gate Charge at 10V VGS = 0V to 10V - 36 47 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 2 2.6 nC Qgs Gate to Source Gate Charge - 4 - nC Qgd Gate to Drain “Miller” Charge - 14 - nC tON Turn-On Time VDD = 30V, ID = 20A VGS = 10V, RGS = 11Ω - - 74 ns td(ON) Turn-On Delay Time - 10 - ns tr Rise Time - 39 - ns td(OFF) Turn-Off Delay Time - 52 - ns tf Fall Time - 33 - ns tOFF Turn-Off Time - - 128 ns VSD Source to Drain Diode Voltage ISD = 20A - - 1.25 V ISD = 10A - - 1.0 V trr Reverse Recovery Time ISD = 20A, dISD/dt = 100A/µs- - 55 ns QRR Reverse Recovered Charge ISD = 20A, dISD/dt = 100A/µs- - 83 nC |
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