©2002 Fairchild Semiconductor Corporation

HUFA76645P3, HUFA76645S3S Rev. B

PSPICE Electrical Model

.SUBCKT HUFA76645 2 1 3 ;

rev 7 June 1999

CA 12 8 7.4e-9

CB 15 14 7.4e-9

CIN 6 8 4.13e-9

DBODY 7 5 DBODYMOD

DBREAK 5 11 DBREAKMOD

DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 121

EDS 14 8 5 8 1

EGS 13 8 6 8 1

ESG 6 10 6 8 1

EVTHRES 6 21 19 8 1

EVTEMP 20 6 18 22 1

IT 8 17 1

LDRAIN 2 5 1e-9

LGATE 1 9 5.1e-9

LSOURCE 3 7 4.4e-9

MMED 16 6 8 8 MMEDMOD

MSTRO 16 6 8 8 MSTROMOD

MWEAK 16 21 8 8 MWEAKMOD

RBREAK 17 18 RBREAKMOD 1

RDRAIN 50 16 RDRAINMOD 8.3e-3

RGATE 9 20 0.96

RLDRAIN 2 5 10

RLGATE 1 9 51

RLSOURCE 3 7 44

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

RSOURCE 8 7 RSOURCEMOD 2.5e-3

RVTHRES 22 8 RVTHRESMOD 1

RVTEMP 18 19 RVTEMPMOD 1

S1A 6 12 13 8 S1AMOD

S1B 13 12 13 8 S1BMOD

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMOD

VBAT 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*200),3.2))}

.MODEL DBODYMOD D (IS = 3.6e-12 RS = 2.24e-3 TRS1 = 2e-3 TRS2 = 1.03e-6 CJO = 4.5e-9 TT = 5.1e-8 M = 0.60)

.MODEL DBREAKMOD D (RS = 2.5e- 1TRS1 = 1e- 4TRS2 = 1e-7)

.MODEL DPLCAPMOD D (CJO = 5.4e- 9IS = 1e-3 0Vj = 1.0 M = 0.9)

.MODEL MMEDMOD NMOS (VTO = 1.77 KP = 7 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.96)

.MODEL MSTROMOD NMOS (VTO = 2.11 KP = 200 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)

.MODEL MWEAKMOD NMOS (VTO = 1.5 KP = 0.12 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 9.6 RS = 0.1)

.MODEL RBREAKMOD RES (TC1 = 1.05e- 3TC2 = -5e-7)

.MODEL RDRAINMOD RES (TC1 = 8.8e-3 TC2 = 1.7e-5)

.MODEL RSLCMOD RES (TC1 = 4e-3 TC2 = 1.5e-5)

.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 2e-6)

.MODEL RVTHRESMOD RES (TC1 = -1.9e-3 TC2 = -8e-6)

.MODEL RVTEMPMOD RES (TC1 = -1.7e- 3TC2 = 1e-7)

.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.5 VOFF= -2.0)

.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= -4.5)

.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= 0.5)

.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.0)

.ENDS

NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.

18

22

+

-

6

8

+

-

5

51

19

8

+

-

17

18

6

8

+

-

5

8

+

-

RBREAK

RVTEMP

VBAT

RVTHRES

IT

17

18

19

22

12

13

15

S1A

S1B

S2A

S2B

CA

CB

EGS

EDS

14

8

13

8

14

13

MWEAK

EBREAK

DBODY

RSOURCE

SOURCE

11

7

3

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES

16

21

8

MMED

MSTRO

DRAIN

2

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ESLC

RSLC1

10

5

51

50

RSLC2

1

GATE

RGATE

EVTEMP

9

ESG

LGATE

RLGATE

20

+

-

+

-

+

-

6

HUFA76645P3, HUFA76645S3S