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HUFA76645P3 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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HUFA76645P3 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2002 Fairchild Semiconductor Corporation HUFA76645P3, HUFA76645S3S Rev. B Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 100 - - V ID = 250µA, VGS = 0V , TC = -40 oC (Figure 12) 90 - - V Zero Gate Voltage Drain Current IDSS VDS = 95V, VGS = 0V - - 1 µA VDS = 90V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±16V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 75A, VGS = 10V (Figures 9, 10) - 0.012 0.014 Ω ID = 63A, VGS = 5V (Figure 9) - 0.013 0.015 Ω ID = 62A, VGS = 4.5V (Figure 9) - 0.0135 0.0155 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC TO-220 and TO-263 - - 0.48 oC/W Thermal Resistance Junction to Ambient RθJA -- 62 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 50V, ID = 62A VGS = 4.5V, RGS = 2.4Ω (Figures 15, 21, 22) - - 490 ns Turn-On Delay Time td(ON) -17- ns Rise Time tr - 310 - ns Turn-Off Delay Time td(OFF) -46- ns Fall Time tf - 155 - ns Turn-Off Time tOFF - - 300 ns SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 50V, ID = 75A VGS = 10V, RGS = 2.4Ω (Figures 16, 21, 22) - - 175 ns Turn-On Delay Time td(ON) -11- ns Rise Time tr - 106 - ns Turn-Off Delay Time td(OFF) -69- ns Fall Time tf - 175 - ns Turn-Off Time tOFF - - 365 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 50V, ID = 63A, Ig(REF) = 1.0mA (Figures 14, 19, 20) - 127 153 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 70 84 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 3.8 4.6 nC Gate to Source Gate Charge Qgs -10- nC Gate to Drain “Miller” Charge Qgd -34- nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) - 4400 - pF Output Capacitance COSS - 900 - pF Reverse Transfer Capacitance CRSS - 280 - pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 63A - - 1.25 V ISD = 30A - - 1.0 V Reverse Recovery Time trr ISD = 63A, dISD/dt = 100A/µs - - 128 ns Reverse Recovered Charge QRR ISD = 63A, dISD/dt = 100A/µs - - 520 nC HUFA76645P3, HUFA76645S3S |
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