Datenblatt-Suchmaschine für elektronische Bauteile |
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SI510 Datenblatt(PDF) 4 Page - Silicon Laboratories |
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SI510 Datenblatt(HTML) 4 Page - Silicon Laboratories |
4 / 26 page Si510/511 4 Rev. 1.1 1. Electrical Specifications Table 1. Operating Specifications VDD = 1.8 V ±5%, 2.5 or 3.3 V ±10%, TA = –40 to +85 oC Parameter Symbol Test Condition Min Typ Max Unit Supply Voltage VDD 3.3 V option 2.97 3.3 3.63 V 2.5 V option 2.25 2.5 2.75 V 1.8 V option 1.71 1.8 1.89 V Supply Current IDD CMOS, 100 MHz, single-ended —21 26 mA LVDS (output enabled) —19 23 mA LVPECL (output enabled) —39 43 mA HCSL (output enabled) —41 44 mA Tristate (output disabled) —— 18 mA OE "1" Setting VIH See Note 0.80 x VDD —— V OE "0" Setting VIL See Note — — 0.20 x VDD V OE Internal Pull-Up/Pull- Down Resistor* RI —45 — k Operating Temperature TA –40 — 85 oC *Note: Active high and active low polarity OE options available. Active high option includes an internal pull-up. Active low option includes an internal pull-down. See ordering information on page 14. |
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