Datenblatt-Suchmaschine für elektronische Bauteile |
|
IRFWI520A Datenblatt(PDF) 3 Page - Fairchild Semiconductor |
|
IRFWI520A Datenblatt(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page N-CHANNEL POWER MOSFET Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source Voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward Voltage Fig 3. On-Resistance vs. Drain Current IRFW/I520A 10 -1 10 0 10 1 10 0 10 1 @ Notes : 1. 250 µs Pulse Test 2. T C = 25 oC V GS Top : 15V 10 V 8.0 V 7.0 V 6.0 V 5.5V 5.0 V Bottom : 4.5 V V DS , Drain-Source Voltage [V] 2 4 6 8 10 10 -1 10 0 10 1 25 oC 175 oC - 55 oC @ Notes : 1. V GS = 0 V 2. V DS = 40 V 3. 250 µs Pulse Test V GS , Gate-Source Voltage [V] 0 10 20 30 40 0.0 0.1 0.2 0.3 0.4 @ Note : T J = 25 oC V GS = 20 V V GS = 10 V I D , Drain Current [A] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 10 -1 10 0 10 1 175 oC 25 oC @ Notes : 1. V GS = 0 V 2. 250 µs Pulse Test V SD , Source-Drain Voltage [V] 10 0 10 1 0 200 400 600 C iss= Cgs+ Cgd ( Cds= shorted ) C oss = C ds + C gd C rss= Cgd @ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS , Drain-Source Voltage [V] 0 5 10 15 20 0 5 10 V DS = 80 V V DS = 50 V V DS = 20 V @ Notes : I D = 9.2 A Q G , Total Gate Charge [nC] |
Ähnliche Teilenummer - IRFWI520A |
|
Ähnliche Beschreibung - IRFWI520A |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |