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EMG5T2R Datenblatt(PDF) 2 Page - Rohm

Teilenummer EMG5T2R
Bauteilbeschribung  NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
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Hersteller  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

EMG5T2R Datenblatt(HTML) 2 Page - Rohm

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Data Sheet
EMG5 / UMG5N
lAbsolute maximum ratings
(Ta = 25°C)
<For Tr1 and Tr2 in common>
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics
(Ta = 25°C)
<For Tr1 and Tr2 in common>
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
MHz
Transition frequency
fT *1
VCE = 10V, IE = -5mA,
f = 100MHz
-
250
-
kW
Resistance ratio
R2/R1
-
3.7
4.7
5.7
-
Input resistance
R1
-
7
10
13
m
A
DC current gain
GI
VO = 5V, IO = 5mA
68
-
-
-
Output current
IO(off)
VCC = 50V, VI = 0V
-
-
0.5
V
Input current
II
VI = 5V
-
-
0.88
mA
Output voltage
VO(on)
IO / II = 5mA / 0.25mA
-
0.1
0.3
V
VI(on)
VO = 0.3V, IO = 1mA
1.4
-
-
0.3
Input voltage
VI(off)
VCC = 5V, IO = 100mA
-
-
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Tj
150
°C
Tstg
-
55 to +150
°C
IC(MAX.)*1
100
mA
150 (Total)*3
mW
PD *2
VIN
-
6 to +40
V
IO
70
mA
Parameter
Symbol
Values
Unit
VCC
50
V
2/6
2012.06 - Rev.B


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