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SEMICONDUCTOR

TECHNICAL DATA

KF5N40D/I

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Convertor and

switching mode power supplies.

FEATURES

・V

・Drain-Source ON Resistance : R

・Qg(typ.) =5.5 nC

MAXIMUM RATING (Tc=25

℃)

* : Drain current limited by maximum junction temperature.

G

D

S

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

400

V

Gate-Source Voltage

±30

V

Drain Current

4.2

A

2.8

Pulsed (Note1)

10*

Single Pulsed Avalanche Energy

(Note 2)

70

mJ

Repetitive Avalanche Energy

(Note 1)

2.7

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Drain Power

Dissipation

50

W

Derate above25

℃

0.4

W/

℃

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

2.5

℃/W

Thermal Resistance, Junction-to-

Ambient

110

℃/W

DPAK (1)

DIM MILLIMETERS

A

A

B

B

C

C

D

D

F

FF

H

G

K

G

J

L

K

L

M

0.96 MAX

0.90 MAX

E

E

M

N

H

0.70 MIN

O

0.1 MAX

N

12

3

6.60

0.20

+

_

6.10 0.20

+

_

5.34

0.30

+

_

0.70 0.20

+

_

2.70

0.15

+

_

2.30 0.10

+

_

1.80 0.20

+

_

0.50

0.10

+

_

2.30 0.10

+

_

0.50 0.10

+

_

J

O

1. GATE

3. SOURCE

2. DRAIN

IPAK(1)

123

A

A

B

C

C

D

E

F

FF

G

G

H

H

J

J

L

L

0.96 MAX

K

M

P

M

N

P

N

6.6 0.2

+

_

6.1 0.2

+

_

5.34 0.3

+

_

0.7 0.2

+

_

9.3 0.3

+

_

2.3 0.2

+

_

0.76 0.1

+

_

2.3 0.1

+

_

0.5 0.1

+

_

1.8

0.2

+

_

0.5

0.1

+

_

1.0

0.1

+

_

+

_

1.02

0.3

DIM

MILLIMETERS

1. GATE

3. SOURCE

2. DRAIN

PIN CONNECTION

KF5N40D

KF5N40I