2009. 8. 17

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SEMICONDUCTOR

TECHNICAL DATA

KMA3D0N20SA

N-Ch Trench MOSFET

Revision No : 2

General Description

This Trench MOSFET has better characteristics, such as fast switching

time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for portable equipment.

FEATURES

・V

・Drain to Source on-state Resistance

・Super Hige Dense Cell Design

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.40+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

Q

0.1 MAX

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

Q

Note1) Surface Mounted on 1

”×1”FR4 Board, t≤5sec.

PIN CONNECTION (TOP VIEW)

CHARACTERISTIC

SYMBOL

N-Ch

UNIT

Drain to Source Voltage

20

V

Gate to Source Voltage

±12

V

Drain Current

(Note1)

3

A

Pulsed

(Note1)

12

Drain Power Dissipation

(Note1)

1.25

W

(Note1)

0.8

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

Thermal Resistance, Junction to Ambient

(Note1)

100

℃/W

2

3

1

GS

D

1

2

3

KNB