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2N1613 Datenblatt(PDF) 1 Page - Comset Semiconductor |
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2N1613 Datenblatt(HTML) 1 Page - Comset Semiconductor |
1 / 3 page NPN 2N1613 – 2N1711 COMSET SEMICONDUCTORS 1/3 The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage 75 V VCER Collector-Emitter Voltage (RBE = 10Ω) 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current 5 mA ICM Peak Collector Current 1 A IBM Peak Base Current 200 mA PD Total Power Dissipation @ Tcase= 25° 3 W @ Tcase= 100° 1.7 W @ Tamb= 25° 0.8 W TJ Junction Temperature 200 °C TStg Storage Temperature range -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-c Thermal Resistance, Junction-case 58 °C/ W RthJ-amb Thermal Resistance, Junction-ambient 219 °C/ W S SIIL LIIC CO ON N P PL LA AN NA AR R E EP PIIT TA AX XIIA AL L T TR RA AN NS SIIS ST TO OR RS S |
Ähnliche Teilenummer - 2N1613 |
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Ähnliche Beschreibung - 2N1613 |
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