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KA3S0680RB-TU Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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KA3S0680RB-TU Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page KA3S0680RB/KA3S0680RFB 2 Absolute Maximum Ratings Note: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=24mH, starting Tj=25 °C Characteristic Symbol Value Unit Maximum Drain voltage (1) VD,MAX 800 V Drain Gate voltage (RGS=1M Ω) VDGR 800 V Gate source (GND) voltage VGS ±30 V Drain current pulsed (2) IDM 24.0 ADC Single pulsed avalanche energy (3) EAS 455 mJ Continuous drain current (TC=25 °C) ID 6.0 ADC Continuous drain current (TC=100 °C) ID 4.0 ADC Maximum supply voltage VCC,MAX 30 V Input voltage range VFB −0.3 to VSD V Total power dissipation PD (watt H/S) 150 W Derating 1.21 W/ °C Operating ambient temperature TA −25 to +85 °C Storage temperature TSTG −55 to +150 °C |
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