Datenblatt-Suchmaschine für elektronische Bauteile |
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KA3S1265R-TU Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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KA3S1265R-TU Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page KA3S1265R/KA3S1265RF/KA3S1265RD 2 Absolute Maximum Ratings Note: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=10mH, VDD=50V, RG=27 Ω, starting Tj=25 °C Characteristic Symbol Value Unit Maximum drain voltage (1) VD,MAX 650 V Drain-gate voltage (RGS=1M Ω) VDGR 650 V Gate-source (GND) voltage VGS ±30 V Drain current pulsed (2) IDM 48.0 ADC Single pulsed avalanche energy (3) EAS 785 mJ Continuous drain current (TC=25 °C) ID 12 ADC Continuous drain current (TC=100 °C) ID 8.4 ADC Maximum supply voltage VCC,MAX 30 V Input voltage range VFB −0.3 to VSD V Total power dissipation PD 269 W Derating 2.17 W/ °C Operating ambient temperature TA −25 to +85 °C Storage temperature TSTG −55 to +150 °C |
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Ähnliche Beschreibung - KA3S1265R-TU |
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