Datenblatt-Suchmaschine für elektronische Bauteile |
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BAT760 Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BAT760 Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 9 page BAT760_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 17 October 2008 2 of 9 NXP Semiconductors BAT760 Medium power Schottky barrier single diode 2. Pinning information [1] The marking bar indicates the cathode. 3. Ordering information 4. Marking 5. Limiting values Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode [1] 2 anode 2 1 sym001 12 Table 3. Ordering information Type number Package Name Description Version BAT760 SC-76 plastic surface-mounted package; 2 leads SOD323 Table 4. Marking codes Type number Marking code BAT760 A4 Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 20 V IF forward current - 1 A IFSM non-repetitive peak forward current tp = 8.3 ms; half-sine wave; JEDEC method -5 A Tj junction temperature - 125 °C Tamb ambient temperature −65 +125 °C Tstg storage temperature −65 +150 °C |
Ähnliche Teilenummer - BAT760_13 |
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Ähnliche Beschreibung - BAT760_13 |
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