Datenblatt-Suchmaschine für elektronische Bauteile |
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BDX64C Datenblatt(PDF) 1 Page - Comset Semiconductor |
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BDX64C Datenblatt(HTML) 1 Page - Comset Semiconductor |
1 / 4 page BDX64 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 1 | 4 P PN NP P SILICON DARLINGTON POWER TRANSISTOR The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX65, BDX65A, BDX65B, BDX65C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDX64 -60 V BDX64A -80 BDX64B -100 BDX64C -120 VCEV Collector-EmitterVoltage VBE=-1.5 V BDX64 -60 V BDX64A -80 BDX64B -100 BDX64C -120 VEBO Emitter-Base Voltage -5.0 V IC Collector Current IC(RMS) -12 A ICM -16 IB Base Current 0.2 A PT Power Dissipation @ TC = 25° 117 W TJ Junction Temperature -55 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.5 °C/W |
Ähnliche Teilenummer - BDX64C |
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Ähnliche Beschreibung - BDX64C |
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