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KSB772O Datenblatt(PDF) 1 Page - Fairchild Semiconductor

Teilenummer KSB772O
Bauteilbeschribung  Audio Frequency Power Amplifier
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KSB772O Datenblatt(HTML) 1 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
Rev. B, October 2002
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
* PW
≤10ms, Duty Cycle≤50%
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤350µs, Duty Cycle≤2%
hFE Classificntion
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
- 40
V
VCEO
Collector-Emitter Voltage
- 30
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 3
A
ICP
*Collector Current (Pulse)
- 7
A
IB
Base Current (DC)
- 0.6
A
PC
Collector Dissipation (TC=25°C)
10
W
Collector Dissipation (Ta=25°C)
1W
Rθja
Junction to Ambient
132
°C/W
Rθjc
Junction to Case
13.5
°C/W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
ICBO
Collector Cut-off Current
VCB = - 30V, IE = 0
- 1
µA
IEBO
Emitter Cut-off Current
VEB = - 3V, IC = 0
- 1
µA
hFE1
hFE2
* DC Current Gain
VCE = - 2V, IC = - 20mA
VCE = - 2V, IC = - 1A
30
60
220
160
400
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 2A, IB = - 0.2A
- 0.3
- 0.5
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = - 2A, IB = - 0.2A
- 1.0
- 2.0
V
fT
Current Gain Bandwidth Product
VCE = - 5V, IE = - 0.1A
80
MHz
Cob
Output Capacitance
VCB = - 10V, IE = 0
f = 1MHz
55
pF
Classification
R
O
Y
G
hFE2
60 ~ 120
100 ~ 200
160 ~ 320
200 ~ 400
KSB772
Audio Frequency Power Amplifier
• Low Speed Switching
• Complement to KSD882
1
TO-126
1. Emitter
2.Collector
3.Base


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