Datenblatt-Suchmaschine für elektronische Bauteile |
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KSD560 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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KSD560 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted * PW ≤10ms, Duty Cycle≤50% Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW ≤350µs, Duty Cycle≤2% Pulsed hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 8 A IB Base Current 0.5 A PC Collector Dissipation (Ta=25°C) 1.5 W PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = 100V, IE = 0 1 µA hFE1 hFE2 *DC Current Gain VCE = 2V, IC = 3A VCE = 2V, IC = 5A 2K 500 6K 15K VCE(sat) *Collector-Emitter Saturation Voltage IC = 3A, IB = 3mA 0.9 1.5 V VBE(sat) *Base-Emitter SaturationVoltage IC = 3A, IB = 3mA 1.6 2 V tON Turn ON Time VCC ⋅=⋅ 50V, I C = 3A IB1 = - IB2 = 3mA RL = 16.7Ω 1 µs tSTG Storage Time 3.5 µs fT Fall Time 1.2 µs Classification R O Y hFE1 2000 ~ 5000 3000 ~ 7000 5000 ~ 15000 KSD560 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB601 1.Base 2.Collector 3.Emitter 1 TO-220 |
Ähnliche Teilenummer - KSD560 |
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Ähnliche Beschreibung - KSD560 |
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